PART |
Description |
Maker |
IS62WV5128ALL IS62WV5128BLL |
(IS62WV5128A(B)LL) 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM (IS62WV51218A(B)LL) 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM
|
Integrated Silicon Solution
|
79LV0408XPFK-20 79LV0408XPFI-20 79LV0408XPFH-20 79 |
Low Voltage 4 Megabit (512k x 8-bit) EEPROM 512K X 8 EEPROM 3V, 250 ns, PDFP40 Low Voltage 4 Megabit (512k x 8-bit) EEPROM 512K X 8 EEPROM 3V, 200 ns, PDFP40 IC LOGIC 3245 OCTAL FET BUS SWITCH -40 85C QSOP-20 55/TUBE 512K X 8 EEPROM 3V, 250 ns, PDFP40
|
Maxwell Technologies, Inc
|
BS616UV4020 BS616UV4020BC BS616UV4020BI BS616UV402 |
Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
|
BSI[Brilliance Semiconductor]
|
BS616UV8020BI BS616UV8020 BS616UV8020BC |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开
|
BRILLIANCE SEMICONDUCTOR, Inc. BSI[Brilliance Semiconductor]
|
N08M1618L1AW N08M1618L1A N08M1618L1AB N08M1618L1AB |
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K × 16 bit 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K 】 16 bit 512K X 16 STANDARD SRAM, 150 ns, PBGA48 BGA-48
|
AMI[AMI SEMICONDUCTOR] Unisonic Technologies Co., Ltd.
|
N08L6182AB27I N08L6182AB27IT N08L6182AB7I N08L6182 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K ? 16bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit 8 Mb, 1.8 V Low Power SRAM; Package: BGA Green; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48 8 Mb, 1.8 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
|
ON Semiconductor
|
WMS512K8BV-20E WMS512K8BV-17E WMS512K8BV-17DEMEA W |
20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 512K X 8 STANDARD SRAM, 17 ns, CDSO32 512Kx8 Monolithic SRAM(512Kx8单片静态RAM(BiCMOS,存取时间17ns 512Kx8 Monolithic SRAM(512Kx8单片静态RAM(BiCMOS,存取时间20ns
|
White Electronic Designs Corporation
|
MAX6840 MAX6839 MAX6838 MAX6837 MAX6836 MAX6835 MA |
1.575 V, 210 ms, ultra-low-voltage voltage detector and mP reset circuit 16-Bit Shift Registers 24-CDIP -55 to 125 8-Bit Identity/Magnitude Comparators 20-LCCC -55 to 125 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-CDIP -55 to 125 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO4 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-CFP -55 to 125 超低电压SC70封装电压检测器和レP复位电路 Ultra-Low-Voltage SC70 Voltage Detectors and µP Reset Circuits 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO4 Ultra-Low-Voltage SC70 Voltage Detectors and レP Reset Circuits 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO3 Ultra-Low-Voltage SC70 Voltage Detectors and µP Reset Circuits 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO3 Ultra-Low-Voltage SC70 Voltage Detectors and レP Reset Circuits 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO4 Ultra-Low-Voltage SC70 Voltage Detectors and µ.P Reset Circuits Ultra-Low-Voltage SC70 Voltage Detectors and μP Reset Circuits Ultra-Low-Voltage SC70 Voltage Detectors and ?P Reset Circuits Ultra-Low-Voltage SC70 Voltage Detectors and P Reset Circuits Ultra-Low-Voltage SC70 Voltage Detectors and ?? Reset Circuits 1.050 V, 0.07 ms, ultra-low-voltage voltage detector and mP reset circuit 1.313 V, 0.07 ms, ultra-low-voltage voltage detector and mP reset circuit 1.575 V, 0.07 ms, ultra-low-voltage voltage detector and mP reset circuit 1.050 V, 219 ms, ultra-low-voltage voltage detector and mP reset circuit 1.313 V, 210 ms, ultra-low-voltage voltage detector and mP reset circuit
|
Maxim Integrated Products, Inc. MAXIM[Maxim Integrated Products] MAXIM INTEGRATED PRODUCTS INC Maxim Integrated Produc... MAXIM - Dallas Semiconductor
|
6206-35/BXAJC 6206-45/BXAJC 6206-45/BYAJC 6206-100 |
x8 SRAM Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits High-Voltage, Low-Current Voltage Monitors in SOT Packages Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits x8的SRAM
|
ITT, Corp.
|
BS616LV8017 BS616LV8017FIP70 BS616LV8017EC BS616LV |
Very Low Power/Voltage CMOS SRAM 512K X 16 bit Asynchronous 8M(512Kx16) bits Static RAM Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
|
Brilliance Semiconducto... BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
|
N08L163WC1CT1-55IL N08L163WC1C N08L163WC1CT1 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|